Search results for "series resistance"
showing 10 items of 12 documents
A quartz amplifier for high-sensitivity Fourier-transform ion-cyclotron-resonance measurements with trapped ions
2019
Single-ion sensitivity is obtained in precision Penning-trap experiments devoted to light (anti)particles or ions with low mass-to-charge ratios, by adding an inductance coil to an amplifier connected to the trap, both operated at 4 K. However, single-ion sensitivity has not been reached on heavy singly or doubly charged ions. In this publication, we present a new system to reach this point, based on the use of a quartz crystal as an inductance, together with a newly developed broad-band (BB) amplifier. We detect the reduced-cyclotron frequency of 40Ca+ ions stored in a 7-tesla open-ring Penning trap. By comparing the detected electric signal obtained with the BB amplifier and the fluoresce…
Series resistance determination and further characterization of c-Si PV modules
2012
Abstract This paper presents a new algorithm for determination of the series resistance of crystalline-Si PV modules from individual illuminated I–V curves. The ideality factor and the reverse saturation current are then extracted in the classic way. The approach is applied to in-situ measured data from modules based on two types of mc-Si feedstock. The results indicate that the method yields physically meaningful parameters. An improved definition of local ideality factor is suggested, resulting in m-V plots unaffected by the series resistance. In addition, m-I plots are introduced for the first time. The novel differential techniques reveal an unexpected rise of the ideality factor at ope…
High voltage vacuum-deposited CH3NH3PbI3-CH3NH3PbI3 tandem solar cells
2018
The recent success of perovskite solar cells is based on two solid pillars: the rapid progress of their power conversion efficiency and their flexibility in terms of optoelectrical properties and processing methods. That versatility makes these devices ideal candidates for multi-junction photovoltaics. We report an optically optimized double junction CH3NH3PbI3–CH3NH3PbI3 tandem solar cell where the matched short-circuit current is maximized while parasitic absorption is minimized. The use of an additive vacuum-deposition protocol allows us to reproduce calculated stack designs, which comprise several charge selective materials that ensure appropriate band alignment and charge recombination…
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
2012
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …
Assessment of a New Analytical Expression for the Maximum-Power Point Voltage with Series Resistance
2021
This work compares a recently developed analytical expression for the maximum-power point voltage with experimental data, to test its usability for crystalline silicon solar cells. The experimental data covers measurements from 18 multicrystalline silicon solar cells with different bulk resistivities and cell architectures. We show that the expression is able to predict the maximum power obtainable by the measured cells with relative discrepancies below 1%. Additionally, we compare the accuracy of this new expression with two already existing models.
Improvement of DSSC performance by voltage stress application
2016
Dye-sensitized solar cells (DSSCs) are promising third generation photovoltaic devices given their potential low cost and high efficiency. Some factors still affect DSSCs performance, such structure of electrodes, electrolyte compositions, nature of the sensitizers, power conversion efficiency, long-term stability, etc. In this work we discuss the effect of electrical stresses, which allow to improve DSSC performance. We have investigated the outcomes of forward and reverse DC bias stress as a function of time, voltage, and illumination level in the DSSCs sensitized with the N719, Ruthenium complex based dye. We demonstrate that all the major solar cell parameters, i.e., open circuit voltag…
Ideality factor behavior between the maximum power point and open circuit
2013
The local ideality factor analysis of dark and light I-V curves has been used in the past to study various performance degradation effects in solar cells. Trapping, edge recombination and injection-level-dependent recombination are expressed as “lumps, humps and bumps” in the plots of the local ideality factor over cell voltage (m-V plots). Earlier applications of this differential technique did not correct the plots for the series resistance effect. Thus, the bumps at the higher voltages introduced by some mechanisms were more difficult to quantify. A possible solution is to analyze ISC-VOC curves, but their measurement is not always possible. We present a formula for calculation of the RS…
Extracting parameters from semi-log plots of polycrystalline silicon PV modules outdoor I–V data: Double-exponential model revisited
2010
This paper presents a method for extracting physically meaningful parameters from measured I–V curves of PV modules. The 7-parameter double-exponential model is applied in the modeling. The method is based on linear fitting of semi-logarithmic plots. The paper demonstrates a new technique to estimate the series resistance of a module with high accuracy from such plots. As a result, also the reverse saturation current and the quality factor of the diffusion diode can be determined. The method is applied to outdoor I–V data from a test station with three similar, but not identical, polycrystalline-Si modules. The values of the series resistances found with this method deviate somewhat from th…
Relative efficiency revealed: Equations for k<inf>1</inf>&#x2013;k<inf>6</inf> of the PVGIS model
2014
The European PV Geographical Information System (PVGIS) describes module performance in terms of the relative efficiency with respect to Standard Testing Conditions (STC). The efficiency's dependence on irradiance and operating temperature is modeled with a bi-quadratic polynomial with respect to the relative temperature and the logarithm of relative irradiance. In earlier works, the present author derived relations between two model coefficients describing the irradiance dependence at 25°C, k 1 and k 2 , and I–V curve model parameters such as the series resistance RS and the ideality factor n. There was good agreement between the theoretical and fitted values of k 1 , but the fitted values…
Analytical Modeling of the Maximum Power Point with Series Resistance
2021
This paper presents new analytical expressions for the maximum power point voltage, current, and power that have an explicit dependence on the series resistance. An explicit expression that relates the series resistance to well-known solar cell parameters was also derived. The range of the validity of the model, as well as the mathematical assumptions taken to derive it are explained and discussed. To test the accuracy of the derived model, a numerical single-diode model with solar cell parameters whose values can be found in the latest installment of the solar cell efficiency tables was used. The accuracy of the derived model was found to increase with increasing bandgap and to decrease wi…